RF amplifiers offer top

A series of RF power amplifier modules from NXP provides top-side cooling to enable up to 30% thinner and lighter massive MIMO radios for 5G infrastructure. The A5M34TG140-TC, A5M35TG140-TC, and A5M36TG140-TC Doherty amplifiers are intended for 32T32R, 200-W radios spanning a frequency range of 3.3 GHz to 3.8 GHz.

The modules combine an LDMOS driver and a GaN final stage amplifier to achieve high gain and efficiency with wideband performance. They deliver 31 dB gain and 46% efficiency over 400 MHz of instantaneous bandwidth. The devices’ top-side cooling reduces design and manufacturing complexities by eliminating the need for a dedicated RF shield and providing clean separation of thermal and RF paths.

Specifically, the A5M34TG140-TC operates from 3300 MHz to 3670 MHz (31 dB, 10.7 W average); the A5M35TG140-TC covers 3400 MHz to 3600 MHz (30 dB, 10.5 W average); and the A5M36TG140-TC spans 3400 MHz to 3800 MHz (31 dB, 10 W average). Each device is housed in a 14×10-mm package.

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The A5M34TG140-TC, A5M35TG140-TC, and A5M36TG140-TC RF power amplifier modules are available now. The A5M36TG140-TC is supported by NXP’s RapidRF reference board series.

A5M34TG140-TC product page

A5M35TG140-TC product page

A5M36TG140-TC product page

NXP Semiconductors

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