Gate driver for GaN transistors adds galvanic isolation
- Consumer
- 2023-09-23 22:51:22
A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, motor drivers, solar and wind power systems, home appliances, domestic fans, and wireless chargers by trimming dimensions and bill-of-materials (BOM) costs and facilitating robust safety and electrical protection.
It also claims to be the first galvanically isolated gate driver for GaN transistors; STGAP2GSN, unveiled by STMicroelectronics, minimizes propagation delay across the isolation barrier at just 45 ns while ensuring fast dynamic response. Next, dV/dt transient immunity of ±100 V/ns over the full temperature range guards against unwanted transistor gate change.
The GaN driver is available in standard and narrow versions. Source: STMicroelectronics
The STGAP2GS driver features separate sink and source pins for easy tuning of the gate-driving operation and performance. That ensures tightly controlled switching transitions up to high operating frequencies with sinking and sourcing up to 3-A gate current to the connected GaN transistor.
The single-channel driver can be connected to a high-voltage rail of up to 1,200 V, and with a narrow-body version of STGAP2GS, it can be connected to 1,700 V rails while providing gate driving voltage of up to 15 V. And besides integrated galvanic isolation, it features built-in system protection that includes thermal shutdown and under-voltage lockout (UVLO).
Two demonstration boards—EVSTGAP2GS and EVSTGAP2GSN—combine the standard and narrow versions of STGAP2GSN gate driver with ST’s SGT120R65AL 75 mΩ, 650 V enhancement-mode GaN transistors to help users evaluate the drivers’ capabilities.
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